Samsung Introduces Phase-change Random Access Memory
Here is the info from their press release,
Samsung Electronics Co., Ltd., the world leader in advanced semiconductor technology solutions, announced that it has completed the first working prototype of what is expected to be the main memory device to replace high density NOR flash within the next decade ? a Phase-change Random Access Memory (PRAM). The company unveiled the 512M-Megabit (Mb) device at its sixth annual press conference in Seoul today.
More scalable than any other memory architecture being researched, PRAM features the fast processing speed of RAM for its operating functions combined with the non-volatile features of flash memory for storage, giving it the nickname: perfect RAM.
A key advantage in PRAM is its extremely fast performance. Because PRAM can rewrite data without having to first erase data previously accumulated, it is effectively 30-times faster than conventional flash memory. Incredibly durable, PRAM is also expected to have at least 10-times the life span of flash memory.
Supposedly the tech should be cheaper and smaller than NAND in the long-run — which is considerable given the fact that Samsung also introduced a 32GB NAND chip today made with a 40nm process.
Crank it up, always for faster ram.